Effective models in two-dimensional materials and artificial lattices
Electron optics in two-dimensional materials
Topological phase transitions
Electronic transport properties in strained materials under electromagnetic fields
Knowledge Fields
Nanosciences and Condensed Matter
Optics and Quantum Physics
Applied Physics and Interdisciplinary Topics
Knowledge Areas
Two-dimensional systems and interfaces
Optical
Propiedades mecánicas y magnéticas de materiales
Physical and Mathematical Fundamentals of Quantum Mechanics
Interdisciplinary topics
Grants/Projects
Modelos efectivos de aislantes topológicos en sistemas de baja dimensionalidad, 2025-2026, Universidad Nacional Autónoma de México,
ESTUDIO DE LA DINÁMICA DE ELECTRONES EN MATERIALES BIDIMENSIONALES ANISÓTROPOS, 2021-2021, Otra,
Transporte electrónico en derivados del grafeno y otros materiales nuevos, 2020-2023, Consejo Nacional de Ciencia y Tecnología,
Transiciones topológicas de fase en redes cristalinas artificiales:
emulación de moléculas y nanoestructuras, 2023-2024, Universidad Nacional Autónoma de México,
Selected Articles
Santiago Galván y García, Yonatan Betancur-Ocampo, Francisco Sánchez-Ochoa, and Thomas Stegmann, Atomically Thin Current Pathways in Graphene through Kekulé-O Engineering, Nano Letters, February 2024; 24(7), 2322-2327, DOI: 10.1021/acs.nanolett.3c04703 [V], Link
Santiago Galván y García, Yonatan Betancur Ocampo, Francisco Sánchez Ochoa, y Thomas Stegmann, Atomically Thin Current Pathways in Graphene through Kekulé-O Engineering, Nano Letters, February 2024; 24(2322), 6, DOI: 10.1021/acs.nanolett.3c04703 , Link
Santiago Galván y García, Thomas Stegmann, Yonatan Betancur Ocampo, Generalized Hamiltonian for Kekulé graphene and the emergence
of valley-cooperative Klein tunneling, PHYSICAL REVIEW B, March 2022; 105(125139), 7, DOI: 10.1103/PhysRevB.105.125139 , Link
Erik Díaz Bautista, Yonatan Betancur Ocampo, Phase-space representation of Landau and electron coherent states for uniaxially strained graphene, PHYSICAL REVIEW B, March 2020; 101(125402), 17, DOI: 10.1103/PhysRevB.101.125402 , Link
Yonatan Betancur Ocampo, François Leyvraz, Thomas Stegmann, Electron optics in phosphorene pn junctions: negative reflection and anti-super-Klein tunneling, Nano Letters, September 2019; 19(7760), 9, DOI: 10.1021/acs.nanolett.9b02720 , Link
Yonatan Betancur Ocampo, Partial positive refraction in asymmetric Veselago lenses of uniaxially strained graphene, PHYSICAL REVIEW B, November 2018; 98(205421), 10, DOI: 10.1103/PhysRevB.98.205421 , Link
Latest Articles
Yonatan Betancur-Ocampo, Santiago Galván y García, Samuel Tehuacanero-Nuñez, José Reyes-Gasga, Thomas Stegmann, and Francisco Sánchez-Ochoa, Kekulé distortions in graphene on cadmium sulfide, Physical Review B, February 2025; 111(8), 085431, DOI: 10.1103/PhysRevB.111.085431 [V], Link
Yonatan Betancur Ocampo y Guillermo Monsivais, Identifying Klein tunneling signatures in bearded Su-Schrieffer-Heeger lattices from bent flat bands, Physical Review B, December 2024; 110(115432), 13, DOI: 10.1103/PhysRevB.110.115432 ,
Díaz-Bautista, E; Betancur-Ocampo, Y; Raya, A, Extended transfer matrix method for electron transmission in anisotropic 2D materials: Interplay of strain and (a)periodicity of potentials, JOURNAL OF APPLIED PHYSICS, September 2024; 136.0(12), -, DOI: 10.1063/5.0218589 [V],
Yonatan Betancur Ocampo, Bryan Manjarrez Montañez, Ángel Marbel Martínez Argüello, y Rafael Alberto Méndez Sánchez, Twofold topological phase transitions induced by third-nearest-neighbor hoppings in one-dimensional chains, PHYSICAL REVIEW B, March 2024; 109(104111), 7, DOI: 10.1103/PhysRevB.109.104111 [V], Link
Santiago Galván y García, Yonatan Betancur-Ocampo, Francisco Sánchez-Ochoa, and Thomas Stegmann, Atomically Thin Current Pathways in Graphene through Kekulé-O Engineering, Nano Letters, February 2024; 24(7), 2322-2327, DOI: 10.1021/acs.nanolett.3c04703 [V], Link
Former Students
Esteban Aguirre García, Transporte electrónico en el borofeno 8-pmmn: un modelo efectivo para el estudio de sus propiedades de transporte, 2023-12-01, Licenciatura